GaTe/InSe heterostructures extend detection into the shortwave infrared
A stacked junction responded at 1064 and 1550 nm without cooling.
Tailei Qi and colleagues stacked GaTe and InSe flakes vertically to create a staggered band alignment. In such a junction an interlayer transition can require less energy than the gap of either constituent, making longer wavelengths accessible.
The uncooled device produced signals at both 1064 and 1550 nm. The authors connected this extended response to the type-II alignment; SUSTech’s Liyuan Zhang was a coauthor. The article first appeared online in October 2019 and was included in the journal’s 2020 volume.