A layered photodetector responds to light from 405 to 1550 nm
A device combining MoTe₂, graphene and SnS₂ delivered a sensitive response over a broad range of wavelengths.
The team assembled layers of MoTe₂, graphene and SnS₂ and placed hexagonal boron nitride on either side of the junction. Tests covered wavelengths from 405 to 1550 nm, with peak specific detectivity around 10¹³ Jones. The authors connected the response to absorption in multiple layers and separation of photogenerated charge by the junction’s built-in field.
Alei Li, then a doctoral student in the group, is the first author. Qianxue Chen, an undergraduate who worked with the lab, is the second author. Rui Chen, Liyuan Zhang and Youpin Gong are the corresponding authors. Advanced Materials first published the paper online in December 2018 and included it in volume 31, issue 6, in 2019.