APS March Meeting AbstractsConference publication
Electronic Properties of Large-scale Graphene Chemical Vapor Synthesized on Nickel and on Sapphire
APS March Meeting Abstracts · S1.00172, Pittsburgh, 2009 (2009)
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Introduction
The team compared few-layer films grown on nickel and transferred to a silicon-based substrate with films grown directly on sapphire. Across measurements spanning 2–300 K and fields up to 7 T, both types showed negative low-field magnetoresistance. Weak-localization features in the transferred films allowed the team to estimate carrier scattering lengths.
A closer reading
The comparison connects fabrication to transport. Both films show a low-field resistance decrease, while the transferred film also permits back-gate control and an analysis of carrier scattering. Together these measurements frame a practical question about how the growth and transfer steps affect electronic motion.