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Advanced Optical Materials

Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity

Rui Cao, Hui‐De Wang, Zhi‐Nan Guo, David K. Sang, Li‐Yuan Zhang, Quan‐Lan Xiao, Yu‐Peng Zhang, Dian‐Yuan Fan, Jian‐Qing Li, Han Zhang

Advanced Optical Materials · 7, 1900020 (2019)

Read original paper

DOI 10.1002/adom.201900020

AI thematic illustrationConcept artwork created for this paper.View the journal’s back cover ↗

Introduction

An InSe layer stacked on black phosphorus forms a vertical photodetector with a response from 405 to 1550 nm. The device responds on a roughly 22 ms timescale, while the InSe cap also limits environmental degradation of the black phosphorus.

A closer reading

The upper layer contributes to photogating as well as protecting black phosphorus. Its role is clearer when responsivity, response time and stability are considered together rather than judging the device by its best responsivity at one wavelength.