2018Chinese Physics B

Multi-carrier transport in ZrTe₅ film

Fangdong Tang, Peipei Wang, Peng Wang, Yuan Gan, Le Wang, Wei Zhang, Liyuan Zhang

Chinese Physics B · 27, 087307 (2018)

**AI thematic illustration**Concept artwork created for this paper.

Introduction

Hall measurements and quantum oscillations reveal contributions from both electrons and holes in ZrTe₅ films of different thicknesses. The dominant carrier type switches near a thickness of 40 nm in the measured devices.

A closer reading

A Hall-sign change need not mean one carrier species disappears. A two-carrier model offers another reading, while the proposed roles of surface reactions and fabrication-induced doping caution against assigning the entire thickness trend to intrinsic band structure.