How oxygen vacancies affect hole transport and ultraviolet response in SnO
Researchers identified ordered oxygen vacancies in few-layer tin monoxide and measured how devices made from the flakes carried charge and responded to light.
The researchers exfoliated thin flakes from tin monoxide crystals and examined how missing oxygen atoms were arranged. Field-effect transistors made from the flakes showed a room-temperature hole mobility of 7.3 cm²/(V·s) and an on/off current ratio above 10⁵.
Under ultraviolet illumination, devices reached a responsivity of 1.1 × 10⁴ A/W. The Applied Physics Reviews paper connects the ordering of defects with electrical transport and light detection in the same layered material. Liyuan Zhang at SUSTech is a corresponding author and contributed to project administration and supervision.